(Senior) Principal Process Development Engineer (m/f/d) - Wide Bandgap Technology (SiC/GaN)

Nexperia · Hamburg, Germany

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Company
Nexperia
Location
Hamburg, Germany
Posted
June 25, 2026

About this job

About the role In this leadership role, you will drive the development and industrialization of next-generation wide bandgap technologies, influencing both strategy and execution across our global manufacturing network. What you will do Lead the development, scaling, and industrialization of SiC MOSFET and GaN HEMT technologies across internal fabs and external foundries Act as a technical authority in wide bandgap process integration, driving architecture definition and innovation Own and deliver new manufacturing processes and optimization programs, ensuring best-in-class yield, performance, and reliability Define and execute technology roadmaps, aligning innovation with long-term business strategy Drive global cross-functional collaboration across R&D, production, quality, and external

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(Senior) Principal Process Development Engineer (m/f/d) - Wide Bandgap Technology (SiC/GaN) — Nexperia | NewLuxJob