(Senior) Principal Device Engineer (m/f/d) – GaN Power Devices

Nexperia · Germany

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Company
Nexperia
Location
Germany
Posted
June 25, 2026

About this job

About the Role Join Nexperia and drive the development of next-generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high-performance, manufacturable solutions. What You Will Do Lead device architecture definition and optimization for GaN technologies Own performance targets and balance trade-offs across performance, reliability, and manufacturability Drive TCAD simulation, modeling, and design to support technology and product development Collaborate with cross-functional teams across process, characterization, reliability, and product engineering Support industrialization by delivering robust, scalable device concepts Your Profile Degree (MSc/PhD) or equivalent

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Engineer salaries in Germany

Based on 332 postings that disclose pay.

Median salarygross / year
€70,000
€55,000Typical range€85,000

Estimated from advertised pay across our sources — indicative gross annual figures, not an offer.

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